1 gaas flip chip schottky barrier diodes m/a-com products rev. v7 ma4e1317, ma4e1318, ma4e1319-1, ma4e1319-2, ma4e2160 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. features ? low series resistance ? low capacitance ? high cutoff frequency ? silicon nitride passivation ? polyimide scratch protection ? designed for easy circuit insertion description and applications m/a-com's ma4e1317 single, ma4e1318 anti- parallel pair, ma4e1319-1 reverse tee, ma4e1319-2 series tee and ma4e2160 uncon- nected anti-parallel pair are gallium arsenide flip chip schottky barrier diodes. these devices are fabricated on omcvd epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. the diodes are fully passivated with silicon nitride and have an addi- tional layer of polyimide for scratch protection. the protective coatings prevent damage to the junction during automated or manual handling. the flip chip configuration is suitable for pick and place insertion. the high cutoff frequency of these diodes allows use through millimeter wave frequencies. typical applications include single and double balanced mixers in pcn transceivers and radios, police radar detectors, and automotive radar detectors. the devices can be used through 80 ghz. the ma4e1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. close matching of the diode characteristics results in high lo suppression at the rf input. ma4e1317 ma4e1318 ma4e1319-1 ma4e1319-2 ma4e2160
2 gaas flip chip schottky barrier diodes m/a-com products rev. v7 ma4e1317, ma4e1318, ma4e1319-1, ma4e1319-2, ma4e2160 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. electrical specificati ons @ + 25 c parameters and test conditions symbol units ma4e1317 ma4e1318 min. typ. max. min. typ. max. junction capacitance at 0v at 1 mhz cj pf .020 .020 3 total capacitance at 0v at 1 mhz 1 ct pf .030 .045 .060 .030 3 .045 3 .060 3 junction capacitance difference dcj pf .005 .010 series resistance at +10ma 2 rs ohms 4 7 4 7 forward voltage at +1ma vf1 volts .60 .70 .80 .60 .70 .80 forward voltage difference at 1ma dvf volts .005 .010 reverse breakdown voltage at -10ua vbr volts 4.5 7 ssb noise figure nf db 6.5 4 6.5 4 parameters and test conditions symbol units ma4e1319-1 or -2 ma4e2160 min. typ. max. min. typ. max. junction capacitance at 0v at 1 mhz cj pf .020 3 .020 3 total capacitance at 0v at 1 mhz 1 ct pf .030 3 .045 3 .060 3 .030 3 .045 3 .060 3 junction capacitance difference dcj pf .005 .010 .005 .010 series resistance at +10ma 2 rs ohms 4 7 4 7 forward voltage at +1ma vf1 volts .60 .70 .80 .60 .70 .80 forward voltage difference at 1ma dvf volts .005 .010 .005 .010 reverse breakdown voltage at -10ua vbr volts 4.5 7 4.5 7 ssb noise figure nf db 6.5 4 6.5 4 notes: 1. total capacitance is equivalent to the sum of junction capacitance cj and parasitic capacitance cp. 2. series resistance is determined by m easuring the dynamic resistance and subtract ing the junction resistance of 2.6 ohms. 3. capacitance for the ma4e1318, ma4e2160, ma 4e1319-1 or -2 is per schottky diode. 4. measured at an lo frequency of 9.375 ghz, with an if frequency of 300 mhz. lo drive level is +6 dbm for a single schottky junc- tion. the if noise figure cont ribution (1.5 db) is included.
3 gaas flip chip schottky barrier diodes m/a-com products rev. v7 ma4e1317, ma4e1318, ma4e1319-1, ma4e1319-2, ma4e2160 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. absolute maximum ratings 1 parameter absolute maximum operating temperature -65 c to +125 c storage temperature -65 c to +150 c incident lo power +20 dbm incident rf power +20 dbm . mounting temperature +235c for 10 seconds electrostatic dischar ge ( esd ) classification 2 class 0 1. operation of this device above any one of these parameters may cause permanent damage. 2. human body model forward current vs temperature 0.00 0.01 0.10 1.00 10.00 100.00 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 forward voltage (v) forward current (ma) - 50c +125c 25c
4 gaas flip chip schottky barrier diodes m/a-com products rev. v7 ma4e1317, ma4e1318, ma4e1319-1, ma4e1319-2, ma4e2160 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. mounting techniques these chips were designed to be inserted onto hard or so ft substrates with the junc tion side down. they can be mounted with conductive epoxy or with a low temperature solder preform. the die can also be assembled with the junction side up, and wire or ribbon bonds made to the pads. solder die attach : solder which does not scavenge gold, such as indalloy # 2, is recommended. sn-pb based solders are not rec- ommended due to solder embrittlement. do not expose di e to a temperature greater than 235c, or greater than 200c for longer than 10 seconds. no more than three seconds of scrubbing should be required for attachment. epoxy die attach : assembly can be preheated to 125 - 1 50c. use a minimum amount of epoxy. cure epoxy as per manufac- turer?s schedule. for extended cure times, temperatures should be kept below 200c. handling procedures the following precautions should be observed to avoid damaging these chips: cleanliness: the chips should be handled in a clean environment. do not attempt to clean die after installation. static sensitivity: schottky barrier diodes are esd sensitive and can be damaged by static electricity. proper esd techniques should be used when handling these devices. general handling: the protective polymer coating on the active areas of these die provides scratch protection, particularly for the metal air bridge which contacts the anode. die c an be handled with tweezers or vacuum pickups and are suitable for use with automatic pick-and-place equipment. gaas flip chip ordering information part number package standard quantity per carrier ma4e1317 die in carrier 100 mads-001317-1278hp pocket tape on reel 3000 ma4e1318 wafer on frame 100 mads-001318-1197hp pocket tape on reel 3000 ma4e1319-1 die in carrier 100 ma4e1319-2 die in carrier 100 ma4e2160 die in carrier 100
5 gaas flip chip schottky barrier diodes m/a-com products rev. v7 ma4e1317, ma4e1318, ma4e1319-1, ma4e1319-2, ma4e2160 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. flip chip outline drawings f g e d c b a max. min. max. min. millimeters inches dim. 0.013 0.026 0.008 0.007 0.016 0.004 0.006 0.014 0.027 0.009 0.008 0.017 0.006 0.007 0.335 0.685 0.228 0.203 0.430 0.152 0.177 0.330 0.660 0.203 0.101 0.152 h 0.0075 0.0085 0.190 0.216 h ma4e1317 case style 1278 e b a d f g c 0.177 0.406 alignment indicator (2 plcs) typ typ sq typ f g e d c b a max. min. max. min. millimeters inches dim. .025 .012 .006 .018 .0075 .003 .004 .027 .015 .008 .020 .0085 .005 .006 .69 .37 .20 .50 .216 .13 .15 .64 .32 .15 .45 .190 .08 .10 typ d g a b c ma4e1318 case style 1197 e f
6 gaas flip chip schottky barrier diodes m/a-com products rev. v7 ma4e1317, ma4e1318, ma4e1319-1, ma4e1319-2, ma4e2160 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. flip chip outline drawings typ sq. typ typ .10 .08 .08 .33 .190 .45 .68 .15 .13 .13 .38 .216 .50 .73 .006 .005 .005 .015 .0085 .020 .029 .004 .003 .003 .013 .0075 .018 .027 dim. inches millimeters min. max. min. max. a b c d e g f alignment indicator (3 plcs) c a b g ma4e1319-1 case style 1199 f e d
7 gaas flip chip schottky barrier diodes m/a-com products rev. v7 ma4e1317, ma4e1318, ma4e1319-1, ma4e1319-2, ma4e2160 advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. flip chip outline drawings
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